A quantitative analysis of stress-dislocation evolution and application in GaN-on-Si作者：李孟達(dá)，張皇澍，楊志堅(jiān)，吳潔君，于彤軍單位：北京大學(xué)物理學(xué)院寬禁帶半導(dǎo)體研究中心
Investigation of Defect Characteristics in GaN Layers With Different Carbon Doping Concentration作者：王宏躍，許實(shí)清，周斌，施宜軍，付志偉，陳思，路國(guó)光，黃云，王金延單位：工業(yè)和信息化部電子第五研究所，北京大學(xué)
High valley polarization in monolayer WS2 on AlGaNAuthor：Xu Li，Xinlong Zeng，Zhiming Wu，Yaping Wu，Junyong KangInstitute：Department of Physics, Xiamen University
